12
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of
MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRFE6VP5600H
and MRFE6VP5600HS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2010
?
Initial Release of Data Sheet
1
Jan. 2011
?
Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS
to RFin/VGS,p.1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
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相关代理商/技术参数
MRFE6VP5600HR5-CUT TAPE
制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 600 W 50 V N-Channel RF Power MOSFET - CASE 375D-5
MRFE6VP5600HR6
功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP5600HR6_11
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRFE6VP5600HSR5
功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP5600HSR6
功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25GSR5
功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230GS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25HR5
功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230H
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25HR5-CUT TAPE
制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 1250 W 50 V N-Channel RF Power MOSFET - CASE 375D-5